n-Channel Power MOSFET
OptiMOS™
BSB056N10NN3 G
Data Sheet
2.5, 2011-05-27
Final
Industrial & Multimarket
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
1
Description
OptiMOS™100V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™
100V the best choice forthe demanding requirements of voltage regulator
solutions in Solar, Drives, Datacom and Telecom applications. Super fast
switching Control FETs together with low EMI Sync FETs provide solutions that
are easy to design in. OptiMOS™ products are available in high performance
packages to tackle your most challenging applications giving full flexibility in
optimizing space- efficiency and cost.
Features
•
•
•
•
•
•
•
•
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Optimized for high switching frequency DC/DC converter
Excellent Qg x RDS(on) product (FOM)
Very low on-resistance RDS(on)
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Double sided cooling
Compatible with DirectFET® package MN footprint and outline
Low parasitic inductance
Low profile (2|ID|RDS(on)max,
ID=30 A
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input capacitance
Ciss
-
4100
5500
Output capacitance
Coss
-
750
1000
Reverse transfer capacitance
Crss
-
27
-
Turn-on delay time
td(on)
-
15
-
Rise time
tr
-
9
-
Turn-off delay time
td(off)
-
25
-
Fall time
tf
-
8
-
Final Data Sheet
3
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=50 V,
f=1 MHz
ns
VDD=50V, VGS=10 V,
ID=30 A, RG= 1.6 Ω
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Electrical characteristics
Table 6
Gate charge characteristics1)
Parameter
Symbol
Gate to source charge
Qgs
Values
Min.
Typ.
Max.
-
17
-
Qgd
Unit
Note /
Test Condition
nC
VDD=50 V,
ID=30 A,
VGS=0 to 10 V
9.7
Gate to drain charge
Qsw
-
20
-
Switching charge
Qg
-
56
74
Gate charge total
Vplateau
-
4.2
-
V
Output charge
Qoss
73
97
nC
VDD=50 V, VGS=0 V
Unit
Note /
Test Condition
A
TC=25 °C
1) See figure 16 for gate charge parameter definition
Table 7
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Diode continuous forward current
Is
65
Diode pulse current
IS,pulse
316
Diode forward voltage
VSD
-
0.9
1.2
V
VGS=0 V, IF=IS,
Tj=25 °C
Reverse recovery charge
Qrr
-
174
-
nC
Reverse recovery time
trr
-
64
-
ns
VR=50V, IF=30A,
diF/dt=100 A/µs
Final Data Sheet
4
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 8
1 Power dissipation
2 Drain current
Ptot = f(TC)
ID=f(TC); parameter:VGS
Table 9
3 Safe operating area TC=25 °C
ID=f(VDS); Tj=25 °C; D=0; parameter: Tp
Final Data Sheet
4 Max. transient thermal impedance
Z(thJC)=f(tp); parameter: D=tp/T
5
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Electrical characteristics diagrams
Table 10
5 Typ. output characteristics TC=25 °C
6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=25 °C; parameter: VGS
RDS(on)=f(ID); Tj=25 °C; parameter: VGS
Table 11
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max
gfs=f(ID); Tj=25 °C
Final Data Sheet
6
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Electrical characteristics diagrams
Table 12
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V
VGS(th)=f(Tj); VGS=VDS;
Table 13
11 Typ. capacitances
12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz
IF=f(VSD); parameter: Tj
Final Data Sheet
7
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Electrical characteristics diagrams
Table 14
13 Avalanche characteristics
14 Typ. gate charge
IAS=f(tAV); RGS=25 Ω; parameter: Tj(start)
VGS=f(Qgate); ID=30 A pulsed; parameter: VDD
Table 15
15 Drain-source breakdown voltage
16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
Final Data Sheet
8
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Package outlines
6
Package outlines
Figure 1
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
9
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Package outlines
7
Package outlines
Figure 2
Outlines MG-WDSON-2, dimensions in mm/inches
Final Data Sheet
10
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Package outlines
8
Package outlines
9
Package outlines
Final Data Sheet
11
2.5, 2011-05-27
OptiMOS™ Power-MOSFET
BSB056N10NN3 G
Revision History
9
Revision History
Revision History: 2011-05-27, 2.5
Previous Revision:
Revision
Subjects (major changes since last revision)
0.1
Release of target data sheet
2.0
Release of Final data sheet
2.3
Package outlines errata corrections
2.4
DirectFET Disclaimer expired
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Edition 2011-05-27
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
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and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered..
Final Data Sheet
12
2.5, 2011-05-27
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